1. Crystallography and Product Fundamentals of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, distinguished by its impressive polymorphism– over 250 well-known polytypes– all sharing solid directional covalent bonds yet varying in stacking sequences of Si-C bilayers.
The most technologically appropriate polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal forms 4H-SiC and 6H-SiC, each displaying refined variations in bandgap, electron mobility, and thermal conductivity that affect their suitability for particular applications.
The strength of the Si– C bond, with a bond energy of approximately 318 kJ/mol, underpins SiC’s phenomenal hardness (Mohs hardness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is commonly chosen based on the intended use: 6H-SiC prevails in architectural applications because of its ease of synthesis, while 4H-SiC dominates in high-power electronic devices for its remarkable fee provider movement.
The large bandgap (2.9– 3.3 eV depending upon polytype) also makes SiC an outstanding electric insulator in its pure type, though it can be doped to operate as a semiconductor in specialized electronic tools.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural functions such as grain dimension, thickness, phase homogeneity, and the presence of additional phases or pollutants.
Premium plates are commonly made from submicron or nanoscale SiC powders through sophisticated sintering methods, causing fine-grained, completely thick microstructures that optimize mechanical toughness and thermal conductivity.
Contaminations such as complimentary carbon, silica (SiO â‚‚), or sintering help like boron or aluminum have to be thoroughly controlled, as they can form intergranular films that decrease high-temperature toughness and oxidation resistance.
Recurring porosity, even at reduced levels (
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